Dynamic random-access memory (redirect from 1T1C)
commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell. The transistor is used to admit current into the capacitor during...
89 KB (10,689 words) - 19:17, 11 September 2024
capacitors that extended the scaling of important one-transistor, one-capacitor (1T1C) device technologies. His process for CVD Ti/TiN is still in use for making...
5 KB (406 words) - 03:43, 31 July 2024
1oti, 1s1y, 1s1z, 1s4r, 1s4s, 1s66, 1s67, 1t18, 1t19, 1t1a, 1t1b, 1t1c, 1ts0, 1ts6, 1ts7, 1ts8, 1ugu, 1uwn, 1uwp, 1v9y, 1v9z, 1vb6, 1wa9...
13 KB (1,359 words) - 13:56, 10 June 2024
(ROM). Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor...
229 KB (10,130 words) - 09:25, 5 September 2024
current to and from it, and a transistor to control it – referred to as a "1T1C" cell. This makes DRAM the highest-density RAM currently available, and thus...
46 KB (5,294 words) - 20:19, 25 August 2024