Indium gallium phosphide (redirect from InGaP)
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
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since the InGaP junction operates below MPP current and the GaAs junction operates above MPP current. To improve current match, the InGaP layer is intentionally...
61 KB (8,208 words) - 17:15, 22 July 2024
N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors". Applied Physics Letters. 84 (1):...
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1016/0038-1101(94)90231-3. Cheng, Shiou-Ying (2002). "Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector"...
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Chemistry (CTCC) Centre for Innovative Natural Gass Processes and Products (inGAP) Centre for Accelerator Based Research and Energy Physics (SAFE) Institute...
33 KB (3,680 words) - 06:42, 16 August 2024
the world record conversion efficiency for dual-junction solar cell using InGaP/GaAs tandem structure. The world record was certified by National Renewable...
5 KB (393 words) - 20:13, 11 December 2023
Tainan 1999 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP Skyworks Solutions (formerly Conexant) (formerly Rockwell) United States...
207 KB (6,814 words) - 09:46, 19 August 2024
unfurled, and consisting of SolAero ZTJ triple-junction solar cells made of InGaP/InGaAs/Ge arranged on Orbital ATK UltraFlex arrays. After touchdown on the...
140 KB (11,174 words) - 18:48, 16 August 2024
lighting and the original-version stacked emitters by using GaN on SiC on InGaP but was later found to fracture at higher drive currents. Many white LEDs...
59 KB (5,331 words) - 08:04, 24 July 2024
for high-temperature transistors. The compound semiconductors InGaN and InGaP are used in light-emitting diodes (LEDs) and laser diodes. Indium is used...
49 KB (5,732 words) - 17:50, 8 August 2024