An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics...

oscillations (tunnel diodes, Gunn diodes, IMPATT diodes), and to produce light (light-emitting diodes). Tunnel, Gunn and IMPATT diodes exhibit negative resistance...

against overcurrent. Avalanche diode Gunn diode IMPATT diode Lambda diode Resonant-tunneling diode Tunnel junction Zener diode US 3033714, issued 1962-05-08 ...

DIAC Diode (rectifier diode) Gunn diode IMPATT diode Laser diode Light-emitting diode (LED) Photocell Phototransistor PIN diode Schottky diode Solar...

Nobel Prize in Physics. Today, negative resistance diodes such as the Gunn diode and IMPATT diode are widely used as microwave oscillators in such devices...

the phase shift and the output power is substantially lower than in an IMPATT diode. Sze, SM (1981). Physics of Semiconductor Devices. second edition. John...

avalanche diodes can act as negative-resistance devices. The IMPATT diode is an avalanche diode optimized for frequency generation. These are made from doped...

microwave oscillators, resulting in the discovery of the IMPATT diode, Gunn diode, TRAPATT diode, and others. In 1969 Kurokawa derived conditions for stability...

with negative resistance, such as magnetron tubes, tunnel diodes, IMPATT diodes and Gunn diodes.: p.197–198  Negative-resistance oscillators are usually...

in the invention of the IMPATT diode in 1956 by W.T. Read and Ralph L. Johnston and the Gunn diode in 1962 by J. B. Gunn. Diodes are the most widely used...