Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of...
50 KB (5,542 words) - 18:33, 16 October 2024
of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used...
74 KB (8,783 words) - 14:18, 17 October 2024
Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...
3 KB (299 words) - 09:19, 2 May 2024
Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition...
1 KB (128 words) - 09:14, 2 May 2024
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and...
30 KB (3,798 words) - 13:55, 5 October 2024
at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
40 KB (3,875 words) - 18:32, 13 October 2024
Solar cell (section Gallium arsenide thin film)
solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide (GaAs), and germanium (Ge) p–n junctions, are increasing...
150 KB (17,043 words) - 04:37, 19 October 2024
materials have also been employed. Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide...
37 KB (4,046 words) - 11:24, 11 September 2024
the Radio Corporation of America reported on infrared emission from gallium arsenide (GaAs) and other semiconductor alloys in 1955. Braunstein observed...
158 KB (17,095 words) - 13:48, 12 October 2024
Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell)
junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be fabricated...
61 KB (8,205 words) - 16:48, 25 September 2024