other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide was first synthesized and studied by...
50 KB (5,542 words) - 18:33, 16 October 2024
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium...
30 KB (3,798 words) - 13:55, 5 October 2024
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...
5 KB (284 words) - 00:37, 15 May 2024
epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
10 KB (754 words) - 16:21, 4 June 2024
gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminium, indium, and thallium). Elemental gallium is...
74 KB (8,783 words) - 14:18, 17 October 2024
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium...
2 KB (237 words) - 20:40, 16 January 2024
(GaAsP:N). Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige...
1 KB (128 words) - 09:14, 2 May 2024
Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...
16 KB (1,852 words) - 10:05, 26 February 2024
radiative limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
42 KB (5,566 words) - 22:34, 1 June 2024
Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
2 KB (252 words) - 23:48, 5 October 2024