• die shrink (sometimes optical shrink or process shrink) refers to the scaling of metal–oxide–semiconductor (MOS) devices. The act of shrinking a die creates...
    7 KB (652 words) - 21:14, 10 May 2024
  • the memory controller into the CPU die. Added important powerful new instructions, SSE4.2. Westmere: 32 nm shrink of the Nehalem microarchitecture with...
    50 KB (2,895 words) - 13:45, 16 July 2024
  • In semiconductor manufacturing, the "3 nm" process is the next die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology...
    43 KB (3,619 words) - 14:40, 13 June 2024
  • Thumbnail for Haswell (microarchitecture)
    the "fourth-generation core" successor to the Ivy Bridge (which is a die shrink/tick of the Sandy Bridge microarchitecture). Intel officially announced...
    106 KB (4,978 words) - 22:46, 15 July 2024
  • Core processors based on Palm Cove, a 10 nm die shrink of the Kaby Lake microarchitecture. As a die shrink, Palm Cove is a new process in Intel's...
    13 KB (939 words) - 09:35, 17 July 2024
  • Thumbnail for Intel
    continued its tick-tock model of a microarchitecture change followed by a die shrink until the 6th-generation Core family based on the Skylake microarchitecture...
    268 KB (24,204 words) - 18:30, 10 July 2024
  • process is a half-node semiconductor manufacturing process based on a die shrink of the "32 nm" lithography process. It appeared in production in 2010...
    5 KB (447 words) - 01:57, 29 April 2024
  • Thumbnail for Intel Core
    Skymont) is Intel's codename for the 10-nanometer die shrink of the Kaby Lake microarchitecture. As a die shrink, Cannon Lake is a new process in Intel's...
    240 KB (8,927 words) - 03:26, 13 July 2024
  • Thumbnail for Sandy Bridge
    soldered contact with the die and IHS (Integrated Heat Spreader), while Intel's subsequent generation Ivy Bridge uses a 22 nm die shrink and a TIM (Thermal Interface...
    58 KB (2,686 words) - 10:58, 21 May 2024
  • disturbing Moore's law. The 20-nanometre node is an intermediate half-node die shrink based on the 22-nanometre process. TSMC began mass production of 20 nm...
    8 KB (801 words) - 00:51, 28 February 2024