Float-zone silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification...

bulk charge carrier lifetime in float-zone silicon is the highest among various manufacturing processes. Float-zone carrier lifetimes are around 1000...

germanium, and subsequently float-zone silicon became available when Henry Theuerer of Bell Labs adapted Pfann's method to silicon. Types of materials that...

FileZilla, an FTP client and FTP server Float-zone silicon, very pure silicon obtained by vertical zone melting Fracture zone, in geology Farhan Zaman, an short...

f=V_{S}/V_{O}\;} Wikimedia Commons has media related to Czochralski method. Float-zone silicon Paweł Tomaszewski, "Jan Czochralski i jego metoda. Jan Czochralski...

(PERC) Tunnel Oxide Passivated Contact (TOPCon) Heterojunction (HJT) Float-zone silicon Dye-sensitized solar cell (DSSC) Gallium arsenide germanium solar...

by HDSM differs from ones grown by the Czochralski method.[how?] Float-zone silicon Hans J. Scheel; Peter Capper; Peter Rudolph (25 October 2010). Crystal...

for float-zone silicon slices (wafers) to trigger fractional transmutation of Si atoms into phosphorus (P) and therefore doping it into n-type silicon : 366 ...

crucible) to room temperature Crystal growth Czochralski process Float-zone silicon Flux method Laser-heated pedestal growth Shaping processes in crystal...

solid impurities. Bridgman–Stockbarger method Czochralski method Float-zone silicon Kyropoulos method Laser-heated pedestal growth Micro-pulling-down...