Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about...
5 KB (355 words) - 09:09, 2 May 2024
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...
7 KB (750 words) - 04:15, 12 May 2024
suitable materials. In the case of TPV most research has focused on gallium antimonide (GaSb), although germanium (Ge) is also suitable. Another problem...
42 KB (5,566 words) - 22:34, 1 June 2024
Aluminium gallium antimonide, also known as gallium aluminium antimonide or AlGaSb (AlxGa1-xSb), is a ternary III-V semiconductor compound. It can be considered...
7 KB (739 words) - 07:13, 28 January 2024
Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be...
6 KB (626 words) - 09:17, 2 May 2024
Aluminium gallium arsenide Arsine Cadmium telluride Gallium antimonide Gallium arsenide phosphide Gallium manganese arsenide Gallium nitride Gallium phosphide...
47 KB (5,226 words) - 12:53, 27 September 2024
with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure...
74 KB (8,761 words) - 07:52, 20 September 2024
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
38 KB (3,792 words) - 14:13, 29 September 2024
trioxide. Gallium antimonide Indium antimonide Aluminium arsenide K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond...
3 KB (163 words) - 07:49, 30 March 2024
alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of...
54 KB (2,520 words) - 13:46, 17 September 2024