Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...

since the InGaP junction operates below MPP current and the GaAs junction operates above MPP current. To improve current match, the InGaP layer is intentionally...

N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors". Applied Physics Letters. 84 (1):...

Chemistry (CTCC) Centre for Innovative Natural Gass Processes and Products (inGAP) Centre for Accelerator Based Research and Energy Physics (SAFE) Institute...

the world record conversion efficiency for dual-junction solar cell using InGaP/GaAs tandem structure. The world record was certified by National Renewable...

1016/0038-1101(94)90231-3. Cheng, Shiou-Ying (2002). "Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector"...

for high-temperature transistors. The compound semiconductors InGaN and InGaP are used in light-emitting diodes (LEDs) and laser diodes. Indium is used...

Tainan 1999 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP Skyworks Solutions (formerly Conexant) (formerly Rockwell) United States...

lighting and the original-version stacked emitters by using GaN on SiC on InGaP but was later found to fracture at higher drive currents. Many white LEDs...

selectively absorbed in the gate, lowering the Schottky energy barrier. A Pd/InGaP metal-semiconductor (MS) Schottky diode can detect a concentration of 15...