The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and...

transistor (FET) in 1926, but it was not possible to construct a working device at that time. The first working device was a point-contact transistor...

predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components,...

transistors at Bell Labs, the point-contact transistor in 1947. Shockley introduced the improved bipolar junction transistor in 1948, which entered production...

Brattain instead inventing the point-contact transistor in 1947, which was followed by Shockley's bipolar junction transistor in 1948. The first FET device...

as the focal point of information concerning an activity Point-contact transistor, the first type of solid-state electronic transistor ever constructed...

developed a voltage when exposed to light. The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and...

A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the...

point-contact transistors and 550 diodes, manufactured by STC. It had a 48-bit machine word. The 1955 machine had a total of 200 point-contact transistors and 1...

The whole structure comprises a four layered NPNP. The bipolar point-contact transistor was invented in December 1947 at the Bell Telephone Laboratories...