The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and...
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transistor (FET) in 1926, but it was not possible to construct a working device at that time. The first working device was a point-contact transistor...
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predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components,...
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transistors at Bell Labs, the point-contact transistor in 1947. Shockley introduced the improved bipolar junction transistor in 1948, which entered production...
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Brattain instead inventing the point-contact transistor in 1947, which was followed by Shockley's bipolar junction transistor in 1948. The first FET device...
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point-contact transistors and 550 diodes, manufactured by STC. It had a 48-bit machine word. The 1955 machine had a total of 200 point-contact transistors and 1...
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as the focal point of information concerning an activity Point-contact transistor, the first type of solid-state electronic transistor ever constructed...
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A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the...
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Semiconductor (section Early transistors)
developed a voltage when exposed to light. The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and...
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The whole structure comprises a four layered NPNP. The bipolar point-contact transistor was invented in December 1947 at the Bell Telephone Laboratories...
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