• Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical...
    65 KB (7,440 words) - 09:35, 9 August 2024
  • fabrication plants. ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. The company was founded by Arthur...
    18 KB (1,786 words) - 13:53, 19 September 2024
  • interest in diffraction patterns by differentiating by phase. In atomic layer deposition, the substrate acts as an initial surface on which reagents can...
    14 KB (1,600 words) - 09:24, 17 October 2024
  • Essentially, MLD resembles the well established technique of atomic layer deposition (ALD) but, whereas ALD is limited to exclusively inorganic coatings...
    65 KB (8,533 words) - 14:44, 6 August 2024
  • Many growth methods rely on nucleation control such as atomic-layer epitaxy (atomic layer deposition). Nucleation can be modeled by characterizing surface...
    62 KB (8,209 words) - 06:02, 3 October 2024
  • Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically...
    5 KB (568 words) - 18:07, 5 May 2021
  • created using atomic layer deposition (ALD) with unique physical, chemical, and electronic properties. For example, a rough oxide layer can be further...
    5 KB (560 words) - 22:11, 16 May 2024
  • reactions underpinning the thin film deposition technique that years later became known as atomic layer deposition. He was the rector of Leningrad Technological...
    8 KB (696 words) - 11:06, 13 September 2024
  • (2014-12-01). "A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy". Chemical Vapor Deposition. 20 (10–11–12): 332–344. doi:10...
    2 KB (223 words) - 20:33, 23 August 2023
  • Thumbnail for Tuomo Suntola
    materials science, developing the thin film growth technique called atomic layer deposition. Suntola was born in Tampere, Pirkanmaa, in 1943, during the Continuation...
    10 KB (1,173 words) - 05:30, 11 October 2024